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PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
May 2005
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
Features
Temperature compensated, integrated power detector with >20dB dynamic range 41% WCDMA efficiency at +28dBm average output power 1920-1980MHz Meets UMTS/WCDMA and HSDPA performance requirements Compact Lead-free compliant LCC package- (3.0 x 3.0 x 1.0 mm nominal) Single positive-supply operation and low power and shutdown modes Low Vref (2.85V) compatible with advanced handset chipsets Internally matched to 50 and DC blocked RF input/output
General Description
The RMPA2271 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 matched, surface mount modules targeting WCDMA/UMTS applications. Answering the call for integrated Power Detection, the RMPA2271 offers the ability to measure power output over a 20dB range. This feature eliminates the need of an external power detector and lossy directional coupler, improving system perfomance and reducing overall cost. Simple two-state Vmode control is all that is needed to change the PA optimization from high power to low power mode to minimize current usage. The 3 x 3 x 1.0mm LCC package fits into the tightest spaces available on handset boards and is footprint compatible with existing 3 x 3mm LCC power amplifiers. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild's InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
Vcc1 RF IN Vmode
1 1 2 2 3 3 4 4
MMIC Input Match DC Bias Control Power Detector Output Match
8 8 7 7 6 6 5 5
Vcc2 RF OUT GND Pdet
Vref
(c)2005 Fairchild Semiconductor Corporation
1
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RMPA2271 Rev. B
PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
Absolute Ratings 1
Symbol
VCC1, VCC2 Vref Vmode PIN TSTG
Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Parameter
Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
Ratings
5.0 2.6 to 3.5 3.5 +10 -55 to +150
Units
V V V dBm C
Electrical Characteristics (1920 to 1980 MHz)1
Symbol
f Gp Po PAEd WCDMA Operation Power Gain Linear Output Power PAEd (digital) @ +28dBm PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm Itot Pdet High Power Total Current Low Power Total Current Detector Output Adjacent Channel Leakage Ratio ACLR1 ACLR2 5.00MHz Offset 1920-1980MHz 10.00MHz Offset 1920-1980MHz -40 -42 -54 -66 2.0:1 4 -142 -50 -60 10:1 -30 50 7 1 5 85 C mA mA A Vmode 2.0V Po +28dBm No applied RF signal dB dBm/Hz Po +28dBm, 2110 to 2170MHz dBc dBc Po +28dBm Load VSWR 5.0:1 No permanent damage dBc dBc dBc dBc 28 16 41 9 25 450 130 1.4 0.3 27 26 dB dB dBm dBm % % % mA mA V V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode 2.0V, Vcc = 1.4V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V
Parameter
Operating Frequency
Min
1920
Typ
Max
1980
Units
MHz
Comments
General Characteristics VSWR NF Rx No 2fo - 5fo S Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression3 Spurious Outputs2, 3 Ruggedness with Load Mismatch3 Tc Iccq Iref Icc(off)
Notes: 1. All parameters met at TC = +25C, VCC = +3.4V, Vref = 2.85V and load VSWR 1.2:1, unless otherwise noted.
Case Operating Temperature Quiescent Current Reference Current Shutdown Leakage Current
DC Characteristics
2 RMPA2271 Rev. B
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PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
Typical Characteristics
Frequency and Temperature dependency RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm
32 31 30 29
RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm
45 44 43 42
Gain (dB)
PAE (%)
28 27 26 25 24 23 22 1920 1950 1980 T=25C T=85C T=- 30C
41 40 39 38 37 36 35 1920 1950 T=25C T=85C T=-30C
1980
Frequency (MHz)
Frequency (MHz)
RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm
-30 -32 -34
RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm
-40 -42 -44
T=25C T=85C T= -30C
ACLR1 (dBc)
-36 -38 -40 -42 -44 -46 -48 -50 1920 1950 1980
ACLR2 (dBc)
-46 -48 -50 -52 -54 -56 -58 -60 1920 1950
T=25C T=85C T= -30C
1980
Frequency (MHz)
Frequency (MHz)
Power Detector dependency RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vmode=0V, Freq=1950MHz, Temp=25C
1.8 1.6 1.4 Vref=2.75V
RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vmode=0V, Freq=1950MHz, Vref=2.85V
1.8 1.6 1.4 T=25C T= 85C T=-30C
Pdet (Vdc)
Vref=2.85V Vref=2.95V
Pdet (Vdc)
1.2 1 0.8 0.6 0.4 0.2 0 -10 -5 0
1.2 1 0.8 0.6 0.4 0.2 0
5
10
15
20
25
30
-10
-5
0
5
10
15
20
25
30
Pout (dBm)
Pout (dBm )
3 RMPA2271 Rev. B
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PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
Application Note
Due to the varying amplitude envelope of WCDMA signal, a filter is required at the Pdet pin in order to minimize the ripple noise of the detector output voltage (Pdet). RMPA2271 has no integrated filter for the Pdet pin. Therefore, an external low-pass filter, comprising a shunt resistor (R) and a shunt capacitor (C), is required to detect the WCDMA signal properly. The filter bandwidth is determined by the RC time constant of the filter, and can be reduced by increasing the values of the resistor and/or capacitor. A narrower filter bandwidth has the advantage of lower voltage ripple noise, but it comes at the expense of increased response time. A tradeoff needs to be made between the ripple noise and response time for the optimal system performance.
3.3 F Vcc1 SMA1 RF IN 50 ohm TRL Vmode 1000 pF Vref
1000 pF 1 2 3 4 0.1 F
1000 pF 8 7 6 5 9 (package base) R
3.3 F Vcc2 50 ohm TRL SMA2 RF OUT Pdet C
The detector output voltage (Pdet) range can be adjusted by the value of the external shunt resistor (R). The following figure shows the dependence of Pdet voltage as a function of R. The maximum Pdet voltage can be increased by raising the value of R. This provides the added flexibility to handset designers to change the detector range to meet the system requirements.
RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Freq=1950MHz, Temp=25C
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -10
2271 XYTT Z
R=9.1k Ohm R=5.1k Ohm R=2.4k Ohm
Pdet (Vdc)
-5
0
5
10
15
20
25
30
Pout (dBm)
It is recommended that the value of the resistor R is first determined depending on the desired detector output voltage range. Then the value of the shunt capacitor C is selected for the required detector output voltage ripple level, and response time.
4 RMPA2271 Rev. B
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PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for WCDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a typical ACLR1 of -40dBc and ACLR2 of less than -54dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power.
Recommended Operating Conditions
Symbol
f Vcc1, Vcc2 Vref Supply Voltage Reference Voltage (Operating) (Shutdown) Bias Control Voltage (Low-Power) (High-Power) Linear Output Power (High-Power) (Low-Power) Case Operating Temperature -30
Parameter
Operating Frequency
Min
1920 3.0 2.7 0 1.8 0
Typ
3.4 2.85
Max
1980 4.2 3.1 0.5 3.0 0.5 +28 +16 +85
Units
MHz V V V V V dBm dBm C
Vmode
2.0
Pout
Tc
DC Turn On Sequence:
1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm)
5 RMPA2271 Rev. B
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PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
Evaluation Board Layout
3 1 6 6
5 5 2
9 8
4
5
7
Material List
Qty
1 2 6 REF 3 3 2 1 1 1 1 A/R A/R
Item No.
1 2 3 4 5 5 (ALT) 6 7 7 (ALT) 8 9 10 11
Part Number
F100088 #142-0701-841 #S1322-XX-ND PC, Board SMA Connector
Description
Vendor
Fairchild Johnson Digikey Fairchild Murata Panasonic TDK Murata Panasonic Murata IMS Indium Corp. Indium Corp.
RT Angle SGL M Header Assembly, RMPA2271
GRM39X7R102K50V ECJ-1VB1H102K C3215X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K GRM1885C1H101JA01D RCI-0603-5101J SN63 SN96
1000 pF Capacitor (0603) 1000 pF Capacitor (0603) 3.3 F Capacitor (1206) 0.1 F Capacitor (0603) 0.1 F Capacitor (0603) 100 pF Capacitor (0603) 5.1 K Resistor (0603) Solder Paste Solder Paste
Evaluation Board Schematic
3.3 F Vcc1 SMA1 RF IN 50 ohm TRL Vmode 1000 pF Vref
1000 pF 1 2 3 4 0.1 F
1000 pF 8 7 6 5 9 (package base) 5.1K
3.3 F Vcc2 50 ohm TRL SMA2 RF OUT Pdet 100 pF
2271 XYTT Z
6
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RMPA2271 Rev. B
PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
Package Outline
I/O 1 INDICATOR TOP VIEW 1 8
2 +.100 3.00 -.050 mm SQ. 3 4
7
6 5
2 XY 271 T ZT
2271 XYTT
FRONT VIEW
Z
1.10mm MAX.
4X R.25mm 4 BACK SIDE SODER MASK 3 6 2.60mm 2 1 0.85mm BOTTOM VIEW 7 8 0.20mm 1.30mm DETAIL A TYP. 0.40mm 0.10mm 1 0.40mm 0.10mm 5 0.40mm 2
SEE DETAIL A
Signal Description
Pin #
1 2 3 4 5 6 7 8 9
Signal Name
Vcc1 RF In Vmode Vref PDET GND RF Out Vcc2 GND RF Input Signal
Description
Supply Voltage to Input Stage High Power/Low Power Switch Reference Voltage Power detector output voltage Ground RF Output Signal Supply Voltage to Output Stage Ground
7 RMPA2271 Rev. B
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PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Dry-bake devices at 125C for 24 hours minimum. Note: The shipping trays cannot withstand 125C baking temperature. * Assemble the dry-baked devices within 7 days of removal from the oven. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated.
8 RMPA2271 Rev. B
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PRELIMINARY
RMPA2271 WCDMA/UMTS Power EdgeTM Power Amplifier Module with Integrated Power Detector
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15
9 RMPA2271 Rev. B
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